76 silicon npn triple diffused planar transistor (switching transistor) application : humidifier, dc-dc converter, and general purpose symbol v cbo v ceo v ebo i c i b p c tj t stg ratings 200 120 8 7( pulse 14) 3 70(tc=25?) 150 ?5 to +150 unit v v v a a w ? ? n absolute maximum ratings n electrical characteristics symbol i cbo i ebo v (br)ceo h fe v ce (sat) v be (sat) f t c ob ratings 100 max 100 max 120 min 70 to 220 0.5 max 1.2 max 30 typ 110 typ unit m a m a v v v mhz pf conditions v cb =200v v eb =8v i c =50ma v ce =4v, i c =3a i c =3a, i b =0.3a i c =3a, i b =0.3a v ce =12v, i e =?.5a v cb =10v, f=1mhz 2sc3835 (ta=25?) (ta=25?) i c v ce characteristics (typical) h fe i c characteristics (typical) h fe i c temperature characteristics (typical) q j-a t characteristics i c v be temperature characteristics (typical) v ce (sat) i b characteristics (typical) pc ta derating 0 2 2.6 1 0.005 0.01 0.1 0.05 1 0.5 base current i b (a) collector-emitter saturation voltage v ce(sat) (v) i c =1a 3a 0.02 0.1 0.5 1 7 5 20 50 100 200 collector current i c (a) dc current gain h fe (v ce =4v) 5a safe operating area (single pulse) f t i e characteristics (typical) typ ?.01 ?.1 ? ?.05 ?.5 ? 20 10 0 30 cut-off frequency f t (mh z ) (v ce =12v) emitter current i e (a) 10 120 50 5 200 0.05 1 0.5 0.1 20 10 5 collector-emitter voltage v ce (v) collector current i c (a) without heatsink natural cooling 100 s 10ms 0 0 1 2 3 4 5 6 7 2 134 collector-emitter voltage v ce (v) collector current i c (a) 60ma 40ma 20ma 100ma 150ma 200ma i b =10ma 0.4 0.5 1 5 1 10 100 1000 2000 time t(ms) transient thermal resistance q j-a (?c/w) 0 7 2 3 4 5 6 1 0 1.1 1.0 0.5 base-emittor voltage v be (v) collector current i c (a) (v ce =4v) 125?c (case temp) 25?c (case temp) ?0?c (case temp) (v ce =4v) 0.01 0.05 0.1 0.5 1 5 7 20 50 300 100 collector current i c (a) dc current gain h fe 25?c ?0?c 125?c 70 60 50 40 30 20 10 3.5 0 0 25 50 75 100 125 150 ambient temperature ta(?c) maximum power dissipation p c (w) with infinite heatsink without heatsink n typical switching characteristics (common emitter) v cc (v) 50 r l ( ) 16.7 i c (a) 3 v bb2 (v) ? i b2 (a) ?.6 t on ( m s) 0.5 max t stg ( m s) 3.0 max t f ( m s) 0.5 max i b1 (a) 0.3 v bb1 (v) 10 external dimensions mt-100(to3p) 15.6 ?.4 9.6 19.9 ?.3 4.0 2.0 5.0 ?.2 1.8 ?.2 ?.1 2 3 1.05 +0.2 -0.1 20.0min 4.0max be 5.45 ?.1 5.45 ?.1 c 4.8 ?.2 0.65 +0.2 -0.1 1.4 2.0 ?.1 a b weight : approx 6.0g a. part no. b. lot no.
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